? 2002 ixys all rights reserved symbol test conditions characteristic values (t j = 25c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 25 a 1000 v v v gs(th) v ds = v gs , i d = 25 a 2 4.5 v i gss v gs = 20 v dc , v ds = 0 50 na i dss v ds = 0.8 ? v dss t j = 25c 10 a v gs = 0 v t j = 125c 200 a r ds(on) v gs = 10 v, i d = i d25 60 80 ? pulse test, t 300 ms, duty cycle d 2 % symbol test conditions maximum ratings 01n100 v dss t j = 25c to 150c 1000 v v dgr t j = 25c to 150c; r gs = 1 m ? 1000 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25c; t j = 25c to 150c 100 ma i dm t c = 25c, pulse width limited by max. t j 400 ma p d t c = 25c 25 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in) from case for 5 s 300 c weight 0.8 g high voltage mosfet n-channel, enhancement mode to-251 aa (ixtu) d s g g = gate, d = drain, s = source, tab = drain d (tab) features z international standard packages jedec to-251 aa, to-252 aa z low r ds (on) hdmos tm process z rugged polysilicon gate cell structure z fast switching times applications z level shifting z triggers z solid state relays z current regulators 98812c (6/02) to-252 aa (ixty) g s v dss = 1000 v i d25 = 100m a r ds(on) = 80 ? ? ? ? ? ixtu 01n100 ixty 01n100 d (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 ? i d25 , pulse test 140 ms c iss 60 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 7.5 pf c rss 1.8 pf t d(on) 12 ns t r v gs = 10 v, v ds = 500 v, i d = i d25 12 ns t d(off) r g = 50 ? (external) 28 ns t f 28 ns q g(on) 8nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 i d25 1.8 nc q gd 3nc r thjc 3 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. v sd i f = 100 ma, v gs = 0 v, 1.8 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 0.75 a, -di/dt = 10 a/ s, 1.5 s v ds = 25 v dim. millimeter inches min. max. min. max. a 2.19 2.38 .086 .094 a1 0.89 1.14 0.35 .045 b 0.64 0.89 .025 .035 b1 0.76 1.14 .030 .045 b2 5.21 5.46 .205 .215 c 0.46 0.58 .018 .023 c1 0.46 0.58 .018 .023 d 5.97 6.22 .235 .245 e 6.35 6.73 .250 .265 e 2.28 bsc .090 bsc e1 4.57 bsc .180 bsc h 17.02 17.78 .670 .700 l 8.89 9.65 .350 .380 l1 1.91 2.28 .075 .090 l2 0.89 1.27 .035 .050 l3 1.15 1.52 .045 .060 1. gate 2. drain 3. source 4. drain back heatsink to-251 aa outline ixtu 01n100 ixty 01n100 to-252 aa dim. millimeter inches min. max. min. max. a 2.19 2.38 0.086 0.094 a1 0.89 1.14 0.035 0.045 a2 0 0.13 0 0.005 b 0.64 0.89 0.025 0.035 b1 0.76 1.14 0.030 0.045 b2 5.21 5.46 0.205 0.215 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 d 5.97 6.22 0.235 0.245 d1 4.32 5.21 0.170 0.205 e 6.35 6.73 0.250 0.265 e1 4.32 5.21 0.170 0.205 e 2.28 bsc 0.090 bsc e1 4.57 bsc 0.180 bsc h 9.40 10.42 0.370 0.410 l 0.51 1.02 0.020 0.040 l1 0.64 1.02 0.025 0.040 l2 0.89 1.27 0.035 0.050 l3 2.54 2.92 0.100 0.115 1 anode 2 nc 3 anode 4 cathode
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